Transistor 2n390411/22/2023 ![]() ![]() 2N3904 MMBT3904 SOT-23 Mark: 1A PZT3904 Web Site: Electrical Characteristics TA = 25☌ unless otherwise noted Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 ♚, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 ♚, IC = 0 6.0 V IBL Base Cutoff Current VCE = 30 V, VEB = 3V 50 nA ICEX Collector Cutoff Current VCE = 30 V, VEB = 3V 50 nA OFF CHARACTERISTICS ON CHARACTERISTICS* SMALL SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10) Spice Model fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V, f = 100 MHz 300 MHz Cobo Output Capacitance VCB = 5.0 V, IE = 0, f = 1.0 MHz 4.0 pF Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 8.0 pF NF Noise Figure IC = 100 ♚, VCE = 5.0 V, RS =1.0kΩ,f=10 Hz to 15.7kHz 5.0 dB td Delay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns tr Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns ts Storage Time VCC = 3.0 V, IC = 10mA 200 ns tf Fall Time IB1 = IB2 = 1.0 mA 50 ns hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V 40 70 100 60 30 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.2 0.3 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.65 0.85 0.95 V V NPN General Purpose Amplifier (continued) 2N3904/MMBT3904/PZT3904 Web Site: NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Storage Time vs Collector Current 1 10 100 5 10 100 500 I - COLLECTOR CURRENT (mA) t - S TO R A G E T IM E ( n s) I = I = B1 C B2 I c 10 S T = 125☌ T = 25☌J J Fall Time vs Collector Current 1 10 100 5 10 100 500 I - COLLECTOR CURRENT (mA) t - FA L L T IM E ( n s) I = I = B1 C B2 I c 10 V = 40VCC f T = 125☌ T = 25☌J J Current Gain 0.1 1 10 10 100 500 I - COLLECTOR CURRENT (mA) h - C U R R E N T G A IN V = 10 VCE C fe f = 1.0 kHz T = 25 CA o Output Admittance 0.1 1 10 1 10 100 I - COLLECTOR CURRENT (mA) h - O U T P U T A D M IT TA N C E ( m ho s) V = 10 VCE C o e f = 1.0 kHz T = 25 CA oµ Input Impedance 0.1 1 10 0.1 1 10 100 I - COLLECTOR CURRENT (mA) h - IN P U T IM P E D A N C E ( k ) V = 10 VCE C ie f = 1.0 kHz T = 25 CA oΩ Voltage Feedback Ratio 0.1 1 10 1 2 3 4 5 7 10 I - COLLECTOR CURRENT (mA) h - V O LT A G E F E E D B A C K R A T IO ( x1 0 ) V = 10 VCE C re f = 1.0 kHz T = 25 CA o _ 4 2N3904/MMBT3904/PZT3904 Web Site: Test Circuits 10 KΩ 3.0 V 275 Ω t1 C1 < 4.0 pF Duty Cycle = 2% Duty Cycle = 2% < 1.0 ns - 0.5 V 300 ns 10.6 V 10 < t1 < 500 µs 10.9 V - 9.1 V < 1.0 ns 0 0 10 KΩ 3.0 V 275 Ω C1 < 4.0 pF 1N916 FIGURE 2: Storage and Fall Time Equivalent Test Circuit FIGURE 1: Delay and Rise Time Equivalent Test Circuit NPN General Purpose Amplifier (continued) 2N3904/MMBT3904/PZT3904 Web Site: small, discrete quantities, transistors can be used to create simple electronic switches, digital logic, and signal amplifying circuits. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 ☌ Thermal Characteristics TA = 25☌ unless otherwise noted Symbol Characteristic Max Units 2N3904 *MMBT3904 **PZT3904 PD Total Device Dissipation Derate above 25☌ 625 5.0 350 2.8 1,000 8.0 mW mW/☌ RθJC Thermal Resistance, Junction to Case 83.3 ☌/W RθJA Thermal Resistance, Junction to Ambient 200 357 125 ☌/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm mounting pad for the collector lead min. The factory should be consulted on applications involving pulsed or low duty cycle operations. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. Absolute Maximum Ratings* TA = 25☌ unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. ![]() ¡Descarga datasheet transistor 2n3904 y más Apuntes en PDF de Electrónica solo en Docsity! 2N3904/MMBT3904/PZT3904 C B E TO-92 C B E B C C SOT-223 E NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. ![]()
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